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| MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE QM200HA-HK * * * * * IC Collector current ........................ 200A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 4-5.5 18.8 23 23 17.5 1.3 C2E1 B1 E1 800.25 9.5 20.5 3-M5 90.1 (12) (12) (12) Tab#110, t=0.5 6 480.25 61 39 E2 C1 30 LABEL 8 29+1.5 -0.5 20.5 28 B1X C1 E1 (C2E1) (E2) B1X C1 E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 200 200 1250 12 2000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=200A, IB=2.6A -IC=200A (diode forward voltage) IC=200A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=200A, IB1=-IB2=4A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 200 2.0 2.5 1.75 -- 2.0 12 3.0 0.1 0.39 0.05 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 400 Tj=25C 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C COLLECTOR CURRENT IC (A) IB=4.0A IB=2.0A 240 IB=1.0A IB=0.5A IB=0.2A DC CURRENT GAIN hFE 320 VCE=5.0V 160 VCE=2.0V 80 0 0 1 2 3 4 5 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 VCE=2.0V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 2 7 IB=2.6A 5 Tj=25C Tj=125C 3 2 10 1 7 5 3 2 10 0 7 5 3 2 VCE(sat) BASE CURRENT IB (A) SATURATION VOLTAGE VBE(sat) 10 -1 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=300V 5 IB1=-IB2=4A Tj=25C 3 2 Tj=125C 10 1 7 5 3 2 ts 3 IC=300A SWITCHING TIME ton, ts, tf (s) 2 1 IC=100A IC=200A 0 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 ton 10 0 7 tf 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 2 10 1 VCC=300V IC=200A 7 IB1=4A 5 4 3 tf 2 10 0 7 5 4 3 2 10-1 REVERSE BIAS SAFE OPERATING AREA 400 COLLECTOR CURRENT IC (A) ts, tf (s) IB2=-3A 300 IB2=-8A ts SWITCHING TIME 200 100 Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 0 Tj=125C 0 100 200 300 400 500 600 700 800 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 100 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 50 10 0 S 90 DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 50 1m S 10 m 0 S S D 10 2 7 5 3 2 S 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 0.16 0.14 0.12 C 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) 10 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 Zth (j-c) (C/ W) 0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200HA-HK HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 2000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=300V 5 IB1=-IB2=4A Tj=25C 3 Tj=125C 2 Irr (A), Qrr (c) 10 2 7 5 3 2 10 2 1600 10 1 Irr trr (s) Feb.1999 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Qrr 10 1 10 0 7 5 trr 3 2 10 0 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) |
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